Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure

Nithin Vogirala; Mangalpady Rajaram Shenoy

doi:doi:10.11648/j.ajop.20221002.11

| Peer-Reviewed

Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure

Nithin Vogirala, Mangalpady Rajaram Shenoy

Published in American Journal of Optics and Photonics (Volume 10, Issue 2)

Received: 10 October 2022 Accepted: 28 October 2022 Published: 4 November 2022

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

In this paper, the authors propose an integrated design of an in-plane optically-pumped edge-emitting ridge-waveguide semiconductor laser, without any bulk components. The optical pump radiation is transferred to the active region of the laser through coupling from the adjacent transparent waveguide. The laser device is based on In_1-xGa_xAs_yP_1-y/InP heterojunction, with a pump at 1310 nm wavelength and lasing around 1550 nm. The proposed scheme enables optical-to-optical signal control, in place of the current controlled signal in an electrically-biased semiconductor laser. Since the structure doesn’t require any p-n junctions, a high-quality active material with minimum doping can be employed. In order to simulate the steady-state characteristics of an optically-pumped semiconductor laser, the well-established Connelly’s model for semiconductor optical amplifiers (SOAs) is suitably modified. The validity of the model for semiconductor lasers is established by showing that the evolution of simulated longitudinal modes conforms with the prediction of laser theory. For the chosen device parameters, under optimum operating conditions, the threshold pump power is found to be ≈ 70 mW along with a high pump power conversion efficiency (i.e output laser power/input pump power) of 61%. The proposed all-optically pumped semiconductor laser could be in the form of a 2-port fiber pig-tailed integrated optical device, without the need for any bias current.

Published in	American Journal of Optics and Photonics (Volume 10, Issue 2)
DOI	10.11648/j.ajop.20221002.11
Page(s)	10-15
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Optical Pumping, Semiconductor Lasers, Integrated Optics, Waveguide Coupling

References

[1]	M. Guina, A. Rantamäki, and A. Härkönen, “Optically pumped VECSELs: review of technology and progress,” J Phys D Appl Phys, vol. 50, no. 38, 2017, doi: 10.1088/1361-6463/aa7bfd.
[2]	G. Hou et al., “Near-diffraction-limited semiconductor disk lasers,” Opt Commun, vol. 449, pp. 39–44, 2019, doi: 10.1016/j.optcom.2019.05.035.
[3]	Z. Yang, A. R. Albrecht, J. G. Cederberg, and M. Sheik-Bahae, “Optically pumped DBR-free semiconductor disk lasers,” Opt Express, vol. 23, no. 26, pp. 33164–33169, 2015, doi: 10.1364/OE.23.033164.
[4]	Coherent, “Optically Pumped Semiconductor Lasers.” [Online]. Available: https://content.coherent.com/legacy-assets/pdf/Optically-Pumped-Semiconductor-Laser-Brochure.pdf
[5]	P. Qiu et al., “Realization of single-transverse-mode VCSELs incorporating a built-in index guide,” Opt Commun, vol. 504, 2022, doi: 10.1016/j.optcom.2021.127450.
[6]	R. D. Clayton and B. Reid, “Monolithically integrated optically-pumped edge emitting semiconductor laser”
[7]	S. G. Anikitchev, H. Zhou, and R. R. Austin, “Optically pumped edge-emitting semiconductor laser”
[8]	L. Toikkanen et al., “Optically Pumped Edge-Emitting GaAs-Based Laser With Direct Orange Emission,” IEEE Photonics Technology Letters, vol. 26, no. 4, pp. 384–386, 2014, doi: 10.1109/lpt.2013.2294726.
[9]	C. Ruan et al., “Gain-coupled 770 nm DFB semiconductor laser based on surface grating,” Opt Commun, vol. 479, 2021, doi: 10.1016/j.optcom.2020.126377.
[10]	I. Panyaev, I. Zolotovskii, and D. Sannikov, “Laser generation and amplification of TE and TM modes in a semiconductor optical GaAs waveguide with distributed feedback generated by a space charge wave,” Opt Commun, vol. 459, 2020, doi: 10.1016/j.optcom.2019.125026.
[11]	G. P. Agrawal and N. K. Dutta, Semiconductor Lasers. US: Springer, 1995.
[12]	N. Vogirala, M. Shenoy, and Y. Kumar, “Efficient Optically-Pumped Semiconductor Optical Amplifier in a Coupled-Waveguide Configuration: A Novel Proposal,” IEEE Photonics J, vol. 13, no. 6, pp. 1–6, 2021, doi: 10.1109/jphot.2021.3120846.
[13]	M. J. Connelly, “Wideband semiconductor optical amplifier steady-state numerical model,” IEEE J Quantum Electron, vol. 37, no. 3, pp. 439–447, 2001, doi: 10.1109/3.910455.
[14]	V. Nithin, Y. Kumar, and M. R. Shenoy, “Novel scheme of assist-light injection through waveguide coupling in a semiconductor optical amplifier for fast gain recovery,” Opt Commun, vol. 359, pp. 419–425, 2016, doi: https://doi.org/10.1016/j.optcom.2015.09.094.
[15]	D. J. Klotzkin, Introduction to semiconductor lasers for optical communications. Springer, 2020.

Cite This Article

Plain Text BibTeX RIS

APA Style

Nithin Vogirala, Mangalpady Rajaram Shenoy. (2022). Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure. American Journal of Optics and Photonics, 10(2), 10-15. https://doi.org/10.11648/j.ajop.20221002.11

Copy | Download

ACS Style

Nithin Vogirala; Mangalpady Rajaram Shenoy. Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure. Am. J. Opt. Photonics 2022, 10(2), 10-15. doi: 10.11648/j.ajop.20221002.11

Copy | Download

AMA Style

Nithin Vogirala, Mangalpady Rajaram Shenoy. Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure. Am J Opt Photonics. 2022;10(2):10-15. doi: 10.11648/j.ajop.20221002.11

Copy | Download

@article{10.11648/j.ajop.20221002.11,
  author = {Nithin Vogirala and Mangalpady Rajaram Shenoy},
  title = {Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure},
  journal = {American Journal of Optics and Photonics},
  volume = {10},
  number = {2},
  pages = {10-15},
  doi = {10.11648/j.ajop.20221002.11},
  url = {https://doi.org/10.11648/j.ajop.20221002.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20221002.11},
  abstract = {In this paper, the authors propose an integrated design of an in-plane optically-pumped edge-emitting ridge-waveguide semiconductor laser, without any bulk components. The optical pump radiation is transferred to the active region of the laser through coupling from the adjacent transparent waveguide. The laser device is based on In1-xGaxAsyP1-y/InP heterojunction, with a pump at 1310 nm wavelength and lasing around 1550 nm. The proposed scheme enables optical-to-optical signal control, in place of the current controlled signal in an electrically-biased semiconductor laser. Since the structure doesn’t require any p-n junctions, a high-quality active material with minimum doping can be employed. In order to simulate the steady-state characteristics of an optically-pumped semiconductor laser, the well-established Connelly’s model for semiconductor optical amplifiers (SOAs) is suitably modified. The validity of the model for semiconductor lasers is established by showing that the evolution of simulated longitudinal modes conforms with the prediction of laser theory. For the chosen device parameters, under optimum operating conditions, the threshold pump power is found to be ≈ 70 mW along with a high pump power conversion efficiency (i.e output laser power/input pump power) of 61%. The proposed all-optically pumped semiconductor laser could be in the form of a 2-port fiber pig-tailed integrated optical device, without the need for any bias current.},
 year = {2022}
}

Copy | Download

TY  - JOUR
T1  - Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure
AU  - Nithin Vogirala
AU  - Mangalpady Rajaram Shenoy
Y1  - 2022/11/04
PY  - 2022
N1  - https://doi.org/10.11648/j.ajop.20221002.11
DO  - 10.11648/j.ajop.20221002.11
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 10
EP  - 15
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20221002.11
AB  - In this paper, the authors propose an integrated design of an in-plane optically-pumped edge-emitting ridge-waveguide semiconductor laser, without any bulk components. The optical pump radiation is transferred to the active region of the laser through coupling from the adjacent transparent waveguide. The laser device is based on In1-xGaxAsyP1-y/InP heterojunction, with a pump at 1310 nm wavelength and lasing around 1550 nm. The proposed scheme enables optical-to-optical signal control, in place of the current controlled signal in an electrically-biased semiconductor laser. Since the structure doesn’t require any p-n junctions, a high-quality active material with minimum doping can be employed. In order to simulate the steady-state characteristics of an optically-pumped semiconductor laser, the well-established Connelly’s model for semiconductor optical amplifiers (SOAs) is suitably modified. The validity of the model for semiconductor lasers is established by showing that the evolution of simulated longitudinal modes conforms with the prediction of laser theory. For the chosen device parameters, under optimum operating conditions, the threshold pump power is found to be ≈ 70 mW along with a high pump power conversion efficiency (i.e output laser power/input pump power) of 61%. The proposed all-optically pumped semiconductor laser could be in the form of a 2-port fiber pig-tailed integrated optical device, without the need for any bias current.
VL  - 10
IS  - 2
ER  -

Copy | Download

Author Information

Nithin Vogirala

Department of Physics, Indian Institute of Technology Delhi, New Delhi, India
Mangalpady Rajaram Shenoy

Department of Physics, Indian Institute of Technology Delhi, New Delhi, India

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Nithin Vogirala, Mangalpady Rajaram Shenoy. (2022). Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure. American Journal of Optics and Photonics, 10(2), 10-15. https://doi.org/10.11648/j.ajop.20221002.11

Copy | Download

ACS Style

Nithin Vogirala; Mangalpady Rajaram Shenoy. Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure. Am. J. Opt. Photonics 2022, 10(2), 10-15. doi: 10.11648/j.ajop.20221002.11

Copy | Download

AMA Style

Nithin Vogirala, Mangalpady Rajaram Shenoy. Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure. Am J Opt Photonics. 2022;10(2):10-15. doi: 10.11648/j.ajop.20221002.11

Copy | Download

@article{10.11648/j.ajop.20221002.11,
  author = {Nithin Vogirala and Mangalpady Rajaram Shenoy},
  title = {Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure},
  journal = {American Journal of Optics and Photonics},
  volume = {10},
  number = {2},
  pages = {10-15},
  doi = {10.11648/j.ajop.20221002.11},
  url = {https://doi.org/10.11648/j.ajop.20221002.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20221002.11},
  abstract = {In this paper, the authors propose an integrated design of an in-plane optically-pumped edge-emitting ridge-waveguide semiconductor laser, without any bulk components. The optical pump radiation is transferred to the active region of the laser through coupling from the adjacent transparent waveguide. The laser device is based on In1-xGaxAsyP1-y/InP heterojunction, with a pump at 1310 nm wavelength and lasing around 1550 nm. The proposed scheme enables optical-to-optical signal control, in place of the current controlled signal in an electrically-biased semiconductor laser. Since the structure doesn’t require any p-n junctions, a high-quality active material with minimum doping can be employed. In order to simulate the steady-state characteristics of an optically-pumped semiconductor laser, the well-established Connelly’s model for semiconductor optical amplifiers (SOAs) is suitably modified. The validity of the model for semiconductor lasers is established by showing that the evolution of simulated longitudinal modes conforms with the prediction of laser theory. For the chosen device parameters, under optimum operating conditions, the threshold pump power is found to be ≈ 70 mW along with a high pump power conversion efficiency (i.e output laser power/input pump power) of 61%. The proposed all-optically pumped semiconductor laser could be in the form of a 2-port fiber pig-tailed integrated optical device, without the need for any bias current.},
 year = {2022}
}

Copy | Download

TY  - JOUR
T1  - Optically-Pumped Edge-Emitting Semiconductor Laser Using Coupled Ridge-Waveguide Structure
AU  - Nithin Vogirala
AU  - Mangalpady Rajaram Shenoy
Y1  - 2022/11/04
PY  - 2022
N1  - https://doi.org/10.11648/j.ajop.20221002.11
DO  - 10.11648/j.ajop.20221002.11
T2  - American Journal of Optics and Photonics
JF  - American Journal of Optics and Photonics
JO  - American Journal of Optics and Photonics
SP  - 10
EP  - 15
PB  - Science Publishing Group
SN  - 2330-8494
UR  - https://doi.org/10.11648/j.ajop.20221002.11
AB  - In this paper, the authors propose an integrated design of an in-plane optically-pumped edge-emitting ridge-waveguide semiconductor laser, without any bulk components. The optical pump radiation is transferred to the active region of the laser through coupling from the adjacent transparent waveguide. The laser device is based on In1-xGaxAsyP1-y/InP heterojunction, with a pump at 1310 nm wavelength and lasing around 1550 nm. The proposed scheme enables optical-to-optical signal control, in place of the current controlled signal in an electrically-biased semiconductor laser. Since the structure doesn’t require any p-n junctions, a high-quality active material with minimum doping can be employed. In order to simulate the steady-state characteristics of an optically-pumped semiconductor laser, the well-established Connelly’s model for semiconductor optical amplifiers (SOAs) is suitably modified. The validity of the model for semiconductor lasers is established by showing that the evolution of simulated longitudinal modes conforms with the prediction of laser theory. For the chosen device parameters, under optimum operating conditions, the threshold pump power is found to be ≈ 70 mW along with a high pump power conversion efficiency (i.e output laser power/input pump power) of 61%. The proposed all-optically pumped semiconductor laser could be in the form of a 2-port fiber pig-tailed integrated optical device, without the need for any bias current.
VL  - 10
IS  - 2
ER  -

Copy | Download