Research Article
Band Gap Engineering and Light Localization in Si and InP Based Three-dimensional Photonic Crystals
Fairuz Aniqa Salwa*
,
Jahirul Khandaker,
Mohammad Mominur Rahman Islam,
Muhammad Obaidur Rahman,
Md. Abdul Mannan Chowdhury
Issue:
Volume 13, Issue 1, March 2025
Pages:
1-16
Received:
29 July 2025
Accepted:
14 August 2025
Published:
29 August 2025
Abstract: We demonstrated photonic band diagrams of three-dimensional photonic crystals composed of InP and Si for four different lattice types:- face-centered cubic (FCC), inverse opal, woodpile, and diamond structures, making 12 combinations. The Si-based FCC and inverse opal lattices exhibited no photonic band gaps (PBGs). Then, the InP-based inverse opal demonstrated small, significant 1% PBGs. After that the woodpile lattices of dielectric rods in air and diamond lattices of air voids in dielectric for both InP and Si showed large complete PBGS, enabling better photon control. A point defect was introduced in the inverse opal lattice of air voids in Si and InP background. The Si lattice didn’t have a cavity mode, as it had no PBGs. The InP inverse opal lattice localized light effectively within its defect cavity using its 1% PBG, enabling it to act as a resonator and reflector. Light emission was inhibited in the surrounding photonic crystal region, as it was trapped in the defect cavity. The results obtained here are an important step towards the complete control of photons in photonic crystals.
Abstract: We demonstrated photonic band diagrams of three-dimensional photonic crystals composed of InP and Si for four different lattice types:- face-centered cubic (FCC), inverse opal, woodpile, and diamond structures, making 12 combinations. The Si-based FCC and inverse opal lattices exhibited no photonic band gaps (PBGs). Then, the InP-based inverse opal...
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